View IHW15N120R2_655479.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: * Powerful monolithic Body Diode with very low forward voltage * Body diode clamps negative voltages * Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: * Inductive Cooking * Soft Switching Applications Type IHW15N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Mounting Torque Ptot Tj Tstg Ms IFpul s IFSM Symbol VCE IC Value 1200 30 15 45 45 30 15 45 50 130 120 20 25 357 -40...+175 -55...+175 260 0.6 Nm W C V Unit V A VCE 1200V IC 15A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H15R1202 Package PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
ICpul s IF
VGE
1
J-STD-020 and JESD-022 1 Rev. 1.2 May 06
Power Semiconductors
IHW15N120R2
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 4m A, VCE=VGE V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A 11.7 none 5 2500 100 nA S 5.1 1.45 1.55 1.6 5.8 1.65 6.4 A 1.5 1.7 1.8 1.75 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJCD 0.47 RthJC 0.52 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
2
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =1 5 A V G E = 15 V 13 nH 1530 49 39 133 nC pF
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-off energy Total switching energy td(off) tf Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 1 5 A V G E = 0 /1 5 V, R G = 14 . 8, 2) L =2 3 0n H, 2) C = 3 9p F 282 62 0.9 0.9 Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-off energy Total switching energy td(off) tf Eoff Ets T j =1 7 5 C V C C = 60 0 V, I C = 1 5 A, V G E = 0 / 15 V , R G = 1 4. 8 , 2) L =2 3 0n H , 2) C =3 9 pF 342 90 1.3 1.3 Symbol Conditions Value min. typ. max. Unit
2)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 1.2 May 06
Power Semiconductors
IHW15N120R2
Soft Switching Series
tp=1s 10s
40A TC=80C TC=110C
IC, COLLECTOR CURRENT
30A
IC, COLLECTOR CURRENT
10A 50s
20A
Ic
10A
200s 1A 1ms 10ms
0A 10Hz
DC
100Hz 1kHz 10kHz 100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 14.8)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
250W
30A
200W
150W
IC, COLLECTOR CURRENT
50C 75C 100C 125C 150C
Ptot, DISSIPATED POWER
20A
100W
10A
50W
0W 25C
0A 25C
50C
75C
100C 125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
40A VGE=20V 15V 13V 11V 20A 9V 7V
40A VGE=20V
IC, COLLECTOR CURRENT
30A
IC, COLLECTOR CURRENT
15V 30A 13V 11V 9V 20A 7V
10A
10A
0A 0V 1V 2V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
40A TJ=175C
2.5V
IC=30A
IC, COLLECTOR CURRENT
30A
25C
2.0V
IC=15A
1.5V IC=7.5A
20A
1.0V
10A
0.5V
0A 0V 2V 4V 6V 8V 10V
0.0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE =15V)
Power Semiconductors
5
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
td(off)
td(off)
t, SWITCHING TIMES
100ns tf
t, SWITCHING TIMES
100ns
tf
10ns
10ns
0A
10A
20A
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=14.8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V max. 5V typ. 4V
t, SWITCHING TIMES
100ns tf
min.
3V
10ns 25C
50C
75C
100C
125C
150C
2V -50C
0C
50C
100C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=14.8, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.4mA)
Power Semiconductors
6
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
1.8mJ
Eoff
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ Eoff 1.5mJ
1.5mJ 1.3mJ 1.0mJ 0.8mJ 0.5mJ 0.3mJ 0.0mJ
1.0mJ
0.5mJ
0.0mJ 0A 5A 10A 15A 20A 25A
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=14.8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
1.2mJ
1.5mJ
Eoff
E, SWITCHING ENERGY LOSSES
1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 25C Eoff
E, SWITCHING ENERGY LOSSES
1.0mJ
0.5mJ
50C
75C
100C 125C 150C
0.0mJ 400V
500V
600V
700V
800V
900V
TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=14.8, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=15A, RG=14.8, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
15V
1nF
240V 960V
Ciss
VGE, GATE-EMITTER VOLTAGE
10V
c, CAPACITANCE
100pF Coss Crss
5V
0V
10pF
0nC 50nC 100nC 150nC 200nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0.2 10 K/W 0.1 0.05 0.02 0.01 single pulse 10 K/W
-2 -1
10 K/W
-1
0.2 0.1 0.05 0.02 0.01 single pulse
R,(K/W) 0.0861 0.1702 0.1372 0.0454
R1
, (s) 9.37*10-2 1.20*10-2 1.03*10-3 1.15*10-4
R2
R,(K/W) 0.1092 0.1517 0.1148 0.0198
R1
, (s) 7.41*10-2 8.77*10-3 5.58*10-4 3.81*10-5
R2
C 1 = 1 /R 1
C 2 = 2 /R 2
C 1 = 1 /R 1
C 2 = 2 /R 2
10 K/W
-2
10s
100s
1ms
10ms
100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
IF=30A
40A 35A
2.0V 15A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
30A 25A 20A 15A 10A 5A 0A TJ=25C 175C
1.5V 7.5A 1.0V
0.5V
0.0V
0.0V 0.5V 1.0V 1.5V 2.0V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
PG-TO247-3-21
Power Semiconductors
10
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF.
Power Semiconductors
11
Rev. 1.2
May 06
IHW15N120R2
Soft Switching Series
Power Semiconductors
12
Rev. 1.2
May 06

▲Up To Search▲

Price & Availability of IHW15N120R2

	To Download IHW15N120R2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .